CSD87588N Datasheet دیتاشیت

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مشاهده دیتاشیت CSD87588N Datasheet	دانلود دیتاشیت

RoHS: true
Type: 2 N-Channel(Half Bridge)
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD87588N
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 6W
Total Gate Charge (Qg@Vgs): 4.1nC@4.5V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 736pF@15V
Continuous Drain Current (Id): 25A
Gate Threshold Voltage (Vgs(th)@Id): 1.9V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 9.6mΩ@10V,15A
Package: PTAB-5
Manufacturer: Texas Instruments
Input Capacitance (Ciss) (Max) @ Vds: 736pF @ 15V
Supplier Device Package: 5-PTAB (3x2.5)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Base Part Number: CSD87588
Vgs(th) (Max) @ Id: 1.9V @ 250µA
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Package / Case: 5-XFLGA
Part Status: Active
Series: NexFET™
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A
Power - Max: 6W
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
detail: Mosfet Array 2 N-Channel (Half Bridge) 30V 25A 6W Surface Mount 5-PTAB (3x2.5)